PART |
Description |
Maker |
IPSH6N03LB |
OptiMOS2 Power-Transistor
|
Infineon Technologies
|
IPB16CN10NG IPP16CN10NG10 IPI16CN10NG IPD16CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP12CN10LG IPS12CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
BSO150N03 |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 15mOhm, 9.1A, LL, dual OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSO104N03S |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 9.7mOhm, 13A, LL OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSC119N03S BSC119N03SG Q7042S4292 Q7042-S4292 INFI |
OptiMOS®2 - SuperSO8, SO8, DPAK OptiMOS2 Power-Transistor OptiMOS2功率晶体
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BSR302N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
BSL302SN |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
BSS306N |
OptiMOS2 Small-Signal-Transistor Avalanche rated Qualified according to AEC Q101
|
TY Semiconductor Co., Ltd
|
BSB024N03LXG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
BSR802N |
Optimos2 Small-Signal-Tansistor N-channel Avalanche rated
|
TY Semiconductor Co., L...
|